Interfacial profile of axial nanowire heterostructures in the nucleation limited regime

Mesoscopic Impurities Expose a Nucleation-Limited Regime of Crystal Growth.

Nanoscale self-assembly is naturally subject to impediments at the nanoscale. The recently developed ability to follow processes at the molecular level forces us to resolve older, coarse-grained concepts in terms of their molecular mechanisms. In this Letter, we highlight one such example. We present evidence based on experimental and simulation data that one of the cornerstones of crystal grow...

Semiconductor nanowire heterostructures.

Recent progress on the synthesis and characterization of semiconductor nanowire heterostructures is reviewed. We describe a general method for heterostructure synthesis based on chemical vapour deposition and the vapour-liquid-solid growth of crystalline semiconducting nanowires. We then examine examples of nanowire heterostructures for which physical properties have been measured, considering ...

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures

of InAs/GaAs axial nanowire heterostructures Mohanchand Paladugu, Jin Zou, Ya-Nan Guo, Xin Zhang, Hannah J. Joyce, Qiang Gao, H. Hoe Tan, C. Jagadish, and Yong Kim School of Engineering, The University of Queensland, St Lucia, Queensland 4072, Australia Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia, Queensland 4072, Australia Department of Electronic Materials ...

Formation of Metal-Semiconductor Axial Nanowire Heterostructures through Controlled Silicidation Undergraduate Researcher

Semiconductor nanowires show promise for application in nanoscale electronics, but the difficulty of forming low-resistance ohmic contacts provides a challenge to their implementation. To improve the electrical performance of lithographically defined nickel contacts, nickel-silicide/ silicon axial nanowire heterostructures were formed by controlled partial silicidation. Prior to annealing, two-...